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2N6800

Microsemi Corporation
2N6800 HongDa Electronics 2N6800
  • Manufacturer Part# 2N6800
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 400V TO-205AF TO-39
  • More DetailN-Channel 400V 3A (Tc) 800mW (Ta), 25W (Tc) Throug...
In Stock: 1000

Can ship immediately

Datasheet:
2N6800 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-205AF Metal Can
  • Supplier Device Package:TO-39
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):800mW (Ta), 25W (Tc)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:5.75nC @ 10V
  • Series:--

 

  • Rds On (Max) @ Id, Vgs:1 Ohm @ 2A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:3A (Tc)
  • Drain to Source Voltage (Vdss):400V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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