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2N6849U

Microsemi Corporation
2N6849U HongDa Electronics 2N6849U
  • Manufacturer Part# 2N6849U
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 100V 18-LCC
  • More DetailP-Channel 100V 6.5A (Tc) 800mW (Ta), 25W (Tc) Surf...
In Stock: 1000

Can ship immediately

Datasheet:
2N6849U Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:18-CLCC
  • Supplier Device Package:18-ULCC (9.14x7.49)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):800mW (Ta), 25W (Tc)
  • FET Feature:--
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:34.8nC @ 10V
  • Series:--

 

  • Rds On (Max) @ Id, Vgs:300 mOhm @ 4.1A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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