• Manufacturer Part# APT65GP60B2G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionIGBT 600V 100A 833W TMAX
  • More DetailIGBT PT 600V 100A 833W Through Hole
  • Lead Free Status / RoHS StatusLead free / RoHS Compliant
  • Moisture Sensitivity Level (MSL)1 (Unlimited)
In Stock: 119

Can ship immediately

Technical Details

  • Series:POWER MOS 7®
  • Packaging:Tube 
  • Lead Free Status / RoHS Status:--
  • Part Status:Not For New Designs
  • Moisture Sensitivity Level (MSL):--
  • IGBT Type:PT
  • Voltage - Collector Emitter Breakdown (Max):600V
  • Current - Collector (Ic) (Max):100A
  • Current - Collector Pulsed (Icm):250A
  • Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 65A

 

  • Power - Max:833W
  • Switching Energy:605µJ (on), 896µJ (off)
  • Input Type:Standard
  • Gate Charge:210nC
  • Td (on/off) @ 25°C:30ns/91ns
  • Test Condition:400V, 65A, 5 Ohm, 15V
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3 Variant

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