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APT66F60B2

Microsemi Corporation
APT66F60B2 HongDa Electronics APT66F60B2
  • Manufacturer Part# APT66F60B2
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 70A TO-247
  • More DetailN-Channel 600V 70A (Tc) 1135W (Tc) Through Hole T-...
In Stock: 19

Can ship immediately

Datasheet:
APT66F60B2 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:5V @ 2.5mA
  • Package / Case:TO-247-3 Variant
  • Supplier Device Package:T-MAX™ [B2]
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):1135W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:13190pF @ 25V
  • Vgs (Max):±30V
  • Gate Charge (Qg) (Max) @ Vgs:330nC @ 10V

 

  • Series:POWER MOS 8™
  • Rds On (Max) @ Id, Vgs:90 mOhm @ 33A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:70A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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