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APTC60DAM35T1G

Microsemi Corporation
APTC60DAM35T1G HongDa Electronics APTC60DAM35T1G
  • Manufacturer Part# APTC60DAM35T1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 72A SP1
  • More DetailN-Channel 600V 72A (Tc) 416W (Tc) Chassis Mount SP...
In Stock: 1000

Can ship immediately

Datasheet:
APTC60DAM35T1G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.9V @ 5.4mA
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Mounting Type:Chassis Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):416W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:14000pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:518nC @ 10V

 

  • Series:--
  • Rds On (Max) @ Id, Vgs:35 mOhm @ 72A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:72A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Bulk 

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