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APTC90DAM60CT1G

Microsemi Corporation
APTC90DAM60CT1G HongDa Electronics APTC90DAM60CT1G
  • Manufacturer Part# APTC90DAM60CT1G
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 900V 59A SP1
  • More DetailN-Channel 900V 59A (Tc) 462W (Tc) Chassis Mount SP...
In Stock: 1000

Can ship immediately

Datasheet:
APTC90DAM60CT1G Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 6mA
  • Package / Case:SP1
  • Supplier Device Package:SP1
  • Mounting Type:Chassis Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):462W (Tc)
  • FET Feature:Super Junction
  • Input Capacitance (Ciss) (Max) @ Vds:13600pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:540nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:60 mOhm @ 52A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:59A (Tc)
  • Drain to Source Voltage (Vdss):900V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Last Time Buy
  • Packaging:Bulk 

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