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APTM100A13DG

Microsemi Corporation
APTM100A13DG HongDa Electronics APTM100A13DG
  • Manufacturer Part# APTM100A13DG
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 2N-CH 1000V 65A SP6
  • More DetailMosfet Array 2 N-Channel (Half Bridge) 1000V (1kV)...
In Stock: 1000

Can ship immediately

Datasheet:
APTM100A13DG Datasheet

Technical Details

  • Series:--
  • Packaging:Bulk 
  • Part Status:Active
  • FET Type:2 N-Channel (Half Bridge)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C:65A
  • Rds On (Max) @ Id, Vgs:156 mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id:5V @ 6mA

 

  • Gate Charge (Qg) (Max) @ Vgs:562nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:15200pF @ 25V
  • Power - Max:1250W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP6
  • Supplier Device Package:SP6

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