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APTM120H29FG

Microsemi Corporation
APTM120H29FG HongDa Electronics APTM120H29FG
  • Manufacturer Part# APTM120H29FG
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET 4N-CH 1200V 34A SP6
  • More DetailMosfet Array 4 N-Channel (H-Bridge) 1200V (1.2kV) ...
In Stock: 1000

Can ship immediately

Datasheet:
APTM120H29FG Datasheet

Technical Details

  • Series:POWER MOS 7®
  • Packaging:Bulk 
  • Part Status:Active
  • FET Type:4 N-Channel (H-Bridge)
  • FET Feature:Standard
  • Drain to Source Voltage (Vdss):1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C:34A
  • Rds On (Max) @ Id, Vgs:348 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id:5V @ 5mA

 

  • Gate Charge (Qg) (Max) @ Vgs:374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds:10300pF @ 25V
  • Power - Max:780W
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Mounting Type:Chassis Mount
  • Package / Case:SP6
  • Supplier Device Package:SP6

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