ATP101-TL-HX

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:18.5nC @ 10V
• Package / Case:ATPAK (2 leads+tab)
• Supplier Device Package:ATPAK
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):30W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:875pF @ 10V
• Vgs (Max):±20V
• Series:--

• Vgs(th) (Max) @ Id:--
• Rds On (Max) @ Id, Vgs:30 mOhm @ 13A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:25A (Ta)
• Drain to Source Voltage (Vdss):30V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete