ATP106-TL-H Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:--
• Package / Case:ATPAK (2 leads+tab)
• Supplier Device Package:ATPAK
• Mounting Type:Surface Mount
• Operating Temperature:150°C (TJ)
• Power Dissipation (Max):40W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:1380pF @ 20V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V

• Series:--
• Rds On (Max) @ Id, Vgs:25 mOhm @ 15A, 10V
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Current - Continuous Drain (Id) @ 25°C:30A (Ta)
• Drain to Source Voltage (Vdss):40V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)