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BSC152N10NSFGATMA1

Infineon Technologies
BSC152N10NSFGATMA1 HongDa Electronics BSC152N10NSFGATMA1
  • Manufacturer Part# BSC152N10NSFGATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 63A TDSON-8
  • More DetailN-Channel 100V 9.4A (Ta), 63A (Tc) 114W (Tc) Surfa...
In Stock: 1000

Can ship immediately

Datasheet:
BSC152N10NSFGATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 72µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):114W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1900pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:15.2 mOhm @ 25A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 63A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tape & Reel (TR) 

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