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BSC160N10NS3GATMA1 Discrete Semiconductor Products

Infineon Technologies
BSC160N10NS3GATMA1 HongDa Electronics BSC160N10NS3GATMA1
  • Manufacturer Part# BSC160N10NS3GATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 42A TDSON-8
  • More DetailN-Channel 100V 8.8A (Ta), 42A (Tc) 60W (Tc) Surfac...
In Stock: 1000

Can ship immediately

Datasheet:
BSC160N10NS3GATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 33µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):60W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1700pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:25nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:16 mOhm @ 33A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:8.8A (Ta), 42A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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