BSH111BKR

Technical Details

• Vgs(th) (Max) @ Id:1.3V @ 250µA
• Package / Case:TO-236-3, SC-59, SOT-23-3
• Supplier Device Package:TO-236AB (SOT23)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):302mW (Ta)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:30pF @ 30V
• Vgs (Max):±10V
• Gate Charge (Qg) (Max) @ Vgs:0.5nC @ 4.5V

• Series:--
• Rds On (Max) @ Id, Vgs:4 Ohm @ 200mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):4.5V
• Current - Continuous Drain (Id) @ 25°C:210mA (Ta)
• Drain to Source Voltage (Vdss):55V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)