BSH121,135 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1.3V @ 1mA
• Package / Case:SC-70, SOT-323
• Supplier Device Package:SOT-323-3
• Mounting Type:Surface Mount
• Operating Temperature:-65°C ~ 150°C (TJ)
• Power Dissipation (Max):700mW (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:40pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:1nC @ 8V

• Series:TrenchMOS™
• Rds On (Max) @ Id, Vgs:4 Ohm @ 500mA, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:300mA (Ta)
• Drain to Source Voltage (Vdss):75V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Cut Tape (CT)