• Manufacturer Part# BSZ110N06NS3GATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 20A TSDSON-8
  • More DetailN-Channel 60V 20A (Tc) 2.1W (Ta), 50W (Tc) Surface...
In Stock: 25000

Can ship immediately

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 23µA
  • Package / Case:8-PowerVDFN
  • Supplier Device Package:PG-TSDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.1W (Ta), 50W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2700pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:33nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:11 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:20A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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