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BSZ180P03NS3EGATMA1

Infineon Technologies
BSZ180P03NS3EGATMA1 HongDa Electronics BSZ180P03NS3EGATMA1
  • Manufacturer Part# BSZ180P03NS3EGATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 30V 39.6A TSDSON-8
  • More DetailP-Channel 30V 9A (Ta), 39.5A (Tc) 2.1W (Ta), 40W (...
In Stock: 1000

Can ship immediately

Datasheet:
BSZ180P03NS3EGATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.1V @ 48µA
  • Package / Case:8-PowerTDFN
  • Supplier Device Package:PG-TSDSON-8
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):2.1W (Ta), 40W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2220pF @ 15V
  • Vgs (Max):±25V
  • Gate Charge (Qg) (Max) @ Vgs:30nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:18 mOhm @ 20A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:9A (Ta), 39.5A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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