C2M1000170D

Technical Details

• Vgs(th) (Max) @ Id:2.4V @ 100µA
• Package / Case:TO-247-3
• Supplier Device Package:TO-247-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):69W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:191pF @ 1000V
• Vgs (Max):+25V, -10V
• Gate Charge (Qg) (Max) @ Vgs:13nC @ 20V

• Series:Z-FET™
• Rds On (Max) @ Id, Vgs:1.1 Ohm @ 2A, 20V
• Drive Voltage (Max Rds On, Min Rds On):20V
• Current - Continuous Drain (Id) @ 25°C:4.9A (Tc)
• Drain to Source Voltage (Vdss):1700V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube