C2M1000170J-TR

Technical Details

• Vgs(th) (Max) @ Id:3.1V @ 500µA (Typ)
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package:D2PAK-7
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):78W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:200pF @ 1000V
• Vgs (Max):+25V, -10V
• Gate Charge (Qg) (Max) @ Vgs:13nC @ 20V

• Series:C2M™
• Rds On (Max) @ Id, Vgs:1.4 Ohm @ 2A, 20V
• Drive Voltage (Max Rds On, Min Rds On):20V
• Current - Continuous Drain (Id) @ 25°C:5.3A (Tc)
• Drain to Source Voltage (Vdss):1700V
• Technology:SiCFET (Silicon Carbide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)