• Manufacturer Part# C3M0065090D
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 900V 36A TO247-3N-Channel 900V 36A (Tc...
  • More DetailN/A
In Stock: 1000

Can ship immediately

Technical Details

  • Series:C3M™
  • Packaging:Tube 
  • Part Status:Active
  • FET Type:N-Channel
  • Technology:SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss):900V
  • Current - Continuous Drain (Id) @ 25°C:36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Rds On (Max) @ Id, Vgs:78 mOhm @ 20A, 15V
  • Vgs(th) (Max) @ Id:2.1V @ 5mA
  • Power - Max:--

 

  • Gate Charge (Qg) (Max) @ Vgs:30.4nC @ 15V
  • Vgs (Max):+18V, -8V
  • Input Capacitance (Ciss) (Max) @ Vds:660pF @ 600V
  • FET Feature:--
  • Power Dissipation (Max):125W (Tc)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-247-3
  • Package / Case:TO-247-3
  • Base Part Number:--

Description

Due to market price fluctuations,if you need to purchase or consult the price.You can contact us or emial to us:   brenda@hongda-ic.com


1. Features

    1. C3M SiC MOSFET technology

    2. High blocking voltage with low On-resistance

    3. High speed switching with low capacitances

    4. Fast intrinsic diode with low reverse recovery (Qrr)

    5. Halogen free, RoHS compliant


2. Benefits

    1. Higher system efficiency

    2. Reduced cooling requirements

    3. Increased power density

    4. Increased system switching frequency

3. Applications

    1. Renewable energy

    2. EV battery chargers

    3. High voltage DC/DC converters

    4. Switch Mode Power Supplies

4. Package Dimensions

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