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C3M0120090D

Cree/Wolfspeed
C3M0120090D HongDa Electronics C3M0120090D
  • Manufacturer Part# C3M0120090D
  • Product CategoryDiscrete Semiconductor Products
  • Short Description900V, 120 MOHM, G3 SIC MOSFET
  • More DetailN-Channel 900V 23A (Tc) 97W (Tc) Through Hole TO-2...
In Stock: 1000

Can ship immediately

Datasheet:
C3M0120090D Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 3mA
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):97W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:350pF @ 600V
  • Vgs (Max):+18V, -8V
  • Gate Charge (Qg) (Max) @ Vgs:17.3nC @ 15V

 

  • Series:C3M™
  • Rds On (Max) @ Id, Vgs:155 mOhm @ 15A, 15V
  • Drive Voltage (Max Rds On, Min Rds On):15V
  • Current - Continuous Drain (Id) @ 25°C:23A (Tc)
  • Drain to Source Voltage (Vdss):900V
  • Technology:SiCFET (Silicon Carbide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tube 

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