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FCPF360N65S3R0L

ON Semiconductor
FCPF360N65S3R0L HongDa Electronics FCPF360N65S3R0L
  • Manufacturer Part# FCPF360N65S3R0L
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionSUPERFET3 650V TO220F PKG
  • More DetailN-Channel 650V 10A (Tc) 27W (Tc) Through Hole TO-2...
In Stock: 1000

Can ship immediately

Datasheet:
FCPF360N65S3R0L Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220F-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):27W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:730pF @ 400V
  • Vgs (Max):±30V
  • Series:SuperFET® III

 

  • Vgs(th) (Max) @ Id:4.5V @ 1mA
  • Rds On (Max) @ Id, Vgs:360 mOhm @ 5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:10A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active

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