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FDB86102LZ Discrete Semiconductor Products

ON Semiconductor
FDB86102LZ HongDa Electronics FDB86102LZ
  • Manufacturer Part# FDB86102LZ
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 30A D2PAK
  • More DetailN-Channel 100V 8.3A (Ta), 30A (Tc) 3.1W (Ta) Surfa...
In Stock: 800

Can ship immediately

Datasheet:
FDB86102LZ Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:TO-263AB
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):3.1W (Ta)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1275pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:21nC @ 10V

 

  • Series:PowerTrench®
  • Rds On (Max) @ Id, Vgs:24 mOhm @ 8.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:8.3A (Ta), 30A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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