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FDB86366-F085

ON Semiconductor
FDB86366-F085 HongDa Electronics FDB86366-F085
  • Manufacturer Part# FDB86366-F085
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 80V 110A TO263
  • More DetailN-Channel 80V 110A (Tc) 176W (Tj) Surface Mount D²...
In Stock: 1000

Can ship immediately

Datasheet:
FDB86366-F085 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 250µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D²PAK (TO-263AB)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):176W (Tj)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:6280pF @ 40V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:112nC @ 10V

 

  • Series:Automotive, AEC-Q101, PowerTrench®
  • Rds On (Max) @ Id, Vgs:3.6 mOhm @ 80A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:110A (Tc)
  • Drain to Source Voltage (Vdss):80V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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