FDFMA2P029Z-F106

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V
• Package / Case:6-WDFN Exposed Pad
• Supplier Device Package:6-MicroFET (2x2)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.4W (Ta)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:720pF @ 10V
• Vgs (Max):±12V
• Series:PowerTrench®

• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Rds On (Max) @ Id, Vgs:95 mOhm @ 3.1A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:3.1A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Active