FDFME2P823ZT Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:1V @ 250µA
• Package / Case:6-UFDFN Exposed Pad
• Supplier Device Package:6-MicroFET (1.6x1.6)
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 150°C (TJ)
• Power Dissipation (Max):1.4W (Ta)
• FET Feature:Schottky Diode (Isolated)
• Input Capacitance (Ciss) (Max) @ Vds:405pF @ 10V
• Vgs (Max):±8V
• Gate Charge (Qg) (Max) @ Vgs:7.7nC @ 4.5V

• Series:PowerTrench®
• Rds On (Max) @ Id, Vgs:142 mOhm @ 2.3A, 4.5V
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Current - Continuous Drain (Id) @ 25°C:2.6A (Ta)
• Drain to Source Voltage (Vdss):20V
• Technology:MOSFET (Metal Oxide)
• FET Type:P-Channel
• Part Status:Obsolete
• Packaging:Tape & Reel (TR)