HGTP2N120CN Discrete Semiconductor Products

Technical Details

• Power - Max:104W
• Supplier Device Package:TO-220AB
• Package / Case:TO-220-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Test Condition:960V, 2.6A, 51 Ohm, 15V
• Td (on/off) @ 25°C:25ns/205ns
• Gate Charge:30nC
• Input Type:Standard
• Switching Energy:96µJ (on), 355µJ (off)
• Series:--

• Vce(on) (Max) @ Vge, Ic:2.4V @ 15V, 2.6A
• Current - Collector Pulsed (Icm):20A
• Current - Collector (Ic) (Max):13A
• Voltage - Collector Emitter Breakdown (Max):1200V
• IGBT Type:NPT
• Moisture Sensitivity Level (MSL):--
• Part Status:Obsolete
• Lead Free Status / RoHS Status:--
• Packaging:Tube