HGTP3N60A4D Discrete Semiconductor Products

Technical Details

• Power - Max:70W
• Supplier Device Package:TO-220AB
• Package / Case:TO-220-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 150°C (TJ)
• Reverse Recovery Time (trr):29ns
• Test Condition:390V, 3A, 50 Ohm, 15V
• Td (on/off) @ 25°C:6ns/73ns
• Gate Charge:21nC
• Input Type:Standard
• Switching Energy:37µJ (on), 25µJ (off)

• Series:--
• Vce(on) (Max) @ Vge, Ic:2.7V @ 15V, 3A
• Current - Collector Pulsed (Icm):40A
• Current - Collector (Ic) (Max):17A
• Voltage - Collector Emitter Breakdown (Max):600V
• IGBT Type:--
• Moisture Sensitivity Level (MSL):--
• Part Status:Not For New Designs
• Lead Free Status / RoHS Status:--
• Packaging:Tube