HN1B01FU-Y(L,F,T) Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Active
• Transistor Type:NPN, PNP
• Current - Collector (Ic) (Max):150mA
• Voltage - Collector Emitter Breakdown (Max):50V
• Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
• Power - Max:200mW
• Frequency - Transition:120MHz
• Operating Temperature:125°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:6-TSSOP, SC-88, SOT-363
• Supplier Device Package:US6