HN1B04F(TE85L,F) Discrete Semiconductor Products

Technical Details

• Series:--
• Packaging:Tape & Reel (TR) 
• Part Status:Obsolete
• Transistor Type:NPN, PNP
• Current - Collector (Ic) (Max):500mA
• Voltage - Collector Emitter Breakdown (Max):30V
• Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 100mA
• Current - Collector Cutoff (Max):100nA (ICBO)

• DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 100mA, 1V
• Power - Max:300mW
• Frequency - Transition:200MHz
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:SC-74, SOT-457
• Supplier Device Package:SM6