IAUT165N08S5N029ATMA2 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3.8V @ 108µA
• Package / Case:8-PowerSFN
• Supplier Device Package:PG-HSOF-8-1
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):167W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:6370pF @ 40V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:90nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:2.9 mOhm @ 80A, 10V
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Current - Continuous Drain (Id) @ 25°C:165A (Tc)
• Drain to Source Voltage (Vdss):80V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)