IAUT260N10S5N019ATMA1 Discrete Semiconductor Products

Technical Details

• Vgs(th) (Max) @ Id:3.8V @ 210µA
• Package / Case:8-PowerSFN
• Supplier Device Package:PG-HSOF-8-1
• Mounting Type:Surface Mount
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):300W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:11830pF @ 50V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:166nC @ 10V

• Series:OptiMOS™-5
• Rds On (Max) @ Id, Vgs:1.9 mOhm @ 100A, 10V
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Current - Continuous Drain (Id) @ 25°C:260A (Tc)
• Drain to Source Voltage (Vdss):100V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tape & Reel (TR)