IPAN65R650CEXKSA1

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 210µA
• Package / Case:TO-220-3 Full Pack
• Supplier Device Package:PG-TO220 Full Pack
• Mounting Type:Through Hole
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):28W (Tc)
• FET Feature:Super Junction
• Input Capacitance (Ciss) (Max) @ Vds:440pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V

• Series:CoolMOS™
• Rds On (Max) @ Id, Vgs:650 mOhm @ 2.1A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:10.1A (Tc)
• Drain to Source Voltage (Vdss):650V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube