IPAN70R750P7SXKSA1

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:8.3nC @ 10V
• Package / Case:TO-220-3 Full Pack
• Supplier Device Package:PG-TO220 Full Pack
• Mounting Type:Through Hole
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):20.8W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:306pF @ 400V
• Vgs (Max):±16V
• Series:CoolMOS™ P7

• Vgs(th) (Max) @ Id:3.5V @ 70µA
• Rds On (Max) @ Id, Vgs:750 mOhm @ 1.4A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:6.5A (Tc)
• Drain to Source Voltage (Vdss):700V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active