IPAW60R280P7SXKSA1

Technical Details

• Gate Charge (Qg) (Max) @ Vgs:18nC @ 10V
• Package / Case:TO-220-3 Full Pack
• Supplier Device Package:PG-TO220 Full Pack
• Mounting Type:Through Hole
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):24W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:761pF @ 400V
• Vgs (Max):±20V
• Series:CoolMOS™ P7

• Vgs(th) (Max) @ Id:4V @ 190µA
• Rds On (Max) @ Id, Vgs:280 mOhm @ 3.8A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:12A (Tc)
• Drain to Source Voltage (Vdss):600V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active