IPAW70R950CEXKSA1

Technical Details

• Vgs(th) (Max) @ Id:3.5V @ 150µA
• Package / Case:TO-220-3 Full Pack
• Supplier Device Package:PG-TO220-3-31 Full Pack
• Mounting Type:Through Hole
• Operating Temperature:-40°C ~ 150°C (TJ)
• Power Dissipation (Max):68W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:328pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:15.3nC @ 10V

• Series:CoolMOS™ CE
• Rds On (Max) @ Id, Vgs:950 mOhm @ 1.5A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:7.4A (Tc)
• Drain to Source Voltage (Vdss):700V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube