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IPB120N03S4L03ATMA1

Infineon Technologies
IPB120N03S4L03ATMA1 HongDa Electronics IPB120N03S4L03ATMA1
  • Manufacturer Part# IPB120N03S4L03ATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH TO263-3
  • More DetailN-Channel 30V 120A (Tc) 79W (Tc) Surface Mount D²P...
In Stock: 1000

Can ship immediately

Datasheet:
IPB120N03S4L03ATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 40µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D²PAK (TO-263AB)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):79W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:5300pF @ 25V
  • Vgs (Max):±16V
  • Gate Charge (Qg) (Max) @ Vgs:72nC @ 10V

 

  • Series:Automotive, AEC-Q101, OptiMOS™
  • Rds On (Max) @ Id, Vgs:3 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drain to Source Voltage (Vdss):30V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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