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IPB180P04P403ATMA1

Infineon Technologies
IPB180P04P403ATMA1 HongDa Electronics IPB180P04P403ATMA1
  • Manufacturer Part# IPB180P04P403ATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH TO263-7
  • More DetailP-Channel 40V 180A (Tc) 150W (Tc) Surface Mount PG...
In Stock: 1000

Can ship immediately

Datasheet:
IPB180P04P403ATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 410µA
  • Package / Case:TO-263-7, D²Pak (6 Leads + Tab)
  • Supplier Device Package:PG-TO263-7-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):150W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:17640pF @ 25V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:250nC @ 10V

 

  • Series:Automotive, AEC-Q101, OptiMOS™
  • Rds On (Max) @ Id, Vgs:2.8 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:180A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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