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IPB60R099CPAATMA1

Infineon Technologies
IPB60R099CPAATMA1 HongDa Electronics IPB60R099CPAATMA1
  • Manufacturer Part# IPB60R099CPAATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 600V 31A TO263-3
  • More DetailN-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG...
In Stock: 1000

Can ship immediately

Datasheet:
IPB60R099CPAATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 1.2mA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3-2
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):255W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2800pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:80nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:105 mOhm @ 18A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tape & Reel (TR) 

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