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IPB60R099P7ATMA1

Infineon Technologies
IPB60R099P7ATMA1 HongDa Electronics IPB60R099P7ATMA1
  • Manufacturer Part# IPB60R099P7ATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH TO263-3
  • More DetailN-Channel 650V 31A (Tc) 117W (Tc) Surface Mount D²...
In Stock: 1000

Can ship immediately

Datasheet:
IPB60R099P7ATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 530µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:D²PAK (TO-263AB)
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):117W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1952pF @ 400V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:45nC @ 10V

 

  • Series:CoolMOS™ P7
  • Rds On (Max) @ Id, Vgs:99 mOhm @ 10.5A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:31A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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