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IPB60R299CPAATMA1

Infineon Technologies
IPB60R299CPAATMA1 HongDa Electronics IPB60R299CPAATMA1
  • Manufacturer Part# IPB60R299CPAATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH TO263-3
  • More DetailN-Channel 600V 11A (Tc) 96W (Tc) Surface Mount PG-...
In Stock: 1000

Can ship immediately

Datasheet:
IPB60R299CPAATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 440µA
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-40°C ~ 150°C (TJ)
  • Power Dissipation (Max):96W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:29nC @ 10V

 

  • Series:Automotive, AEC-Q101, CoolMOS™
  • Rds On (Max) @ Id, Vgs:299 mOhm @ 6.6A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:11A (Tc)
  • Drain to Source Voltage (Vdss):600V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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