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IPD220N06L3GBTMA1

Infineon Technologies
IPD220N06L3GBTMA1 HongDa Electronics IPD220N06L3GBTMA1
  • Manufacturer Part# IPD220N06L3GBTMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 60V 30A TO252-3
  • More DetailN-Channel 60V 30A (Tc) 36W (Tc) Surface Mount PG-T...
In Stock: 1000

Can ship immediately

Datasheet:
IPD220N06L3GBTMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 11µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):36W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1600pF @ 30V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:10nC @ 4.5V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:22 mOhm @ 30A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:30A (Tc)
  • Drain to Source Voltage (Vdss):60V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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