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IPD25CN10NGATMA1

Infineon Technologies
IPD25CN10NGATMA1 HongDa Electronics IPD25CN10NGATMA1
  • Manufacturer Part# IPD25CN10NGATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 35A TO252-3
  • More DetailN-Channel 100V 35A (Tc) 71W (Tc) Surface Mount PG-...
In Stock: 1000

Can ship immediately

Datasheet:
IPD25CN10NGATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:4V @ 39µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):71W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2070pF @ 50V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:31nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:25 mOhm @ 35A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:35A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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