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IPD50P04P4L11ATMA1

Infineon Technologies
IPD50P04P4L11ATMA1 HongDa Electronics IPD50P04P4L11ATMA1
  • Manufacturer Part# IPD50P04P4L11ATMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET P-CH 40V 50A TO252-3
  • More DetailP-Channel 40V 50A (Tc) 58W (Tc) Surface Mount PG-T...
In Stock: 15000

Can ship immediately

Datasheet:
IPD50P04P4L11ATMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2.2V @ 85µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3-313
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):58W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:3900pF @ 25V
  • Vgs (Max):±16V
  • Gate Charge (Qg) (Max) @ Vgs:59nC @ 10V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:10.6 mOhm @ 50A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Drain to Source Voltage (Vdss):40V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:P-Channel
  • Part Status:Active
  • Packaging:Tape & Reel (TR) 

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