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IPD50R650CEBTMA1

Infineon Technologies
IPD50R650CEBTMA1 HongDa Electronics IPD50R650CEBTMA1
  • Manufacturer Part# IPD50R650CEBTMA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N CH 500V 6.1A PG-TO252
  • More DetailN-Channel 500V 6.1A (Tc) 47W (Tc) Surface Mount PG...
In Stock: 1000

Can ship immediately

Datasheet:
IPD50R650CEBTMA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 150µA
  • Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package:PG-TO252-3
  • Mounting Type:Surface Mount
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):47W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:342pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:15nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:650 mOhm @ 1.8A, 13V
  • Drive Voltage (Max Rds On, Min Rds On):13V
  • Current - Continuous Drain (Id) @ 25°C:6.1A (Tc)
  • Drain to Source Voltage (Vdss):500V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Discontinued at Digi-Key
  • Packaging:Tape & Reel (TR) 

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