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IPI045N10N3GXK

Infineon Technologies
IPI045N10N3GXK HongDa Electronics IPI045N10N3GXK
  • Manufacturer Part# IPI045N10N3GXK
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 100V 100A TO262-3
  • More DetailN-Channel 100V 137A (Tc) 214W (Tc) Through Hole PG...
In Stock: 1000

Can ship immediately

Datasheet:
IPI045N10N3GXK Datasheet

Technical Details

  • Gate Charge (Qg) (Max) @ Vgs:117nC @ 10V
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):214W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:8410pF @ 50V
  • Vgs (Max):±20V
  • Series:OptiMOS™ 3

 

  • Vgs(th) (Max) @ Id:3.5V @ 150µA
  • Rds On (Max) @ Id, Vgs:4.5 mOhm @ 100A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):6V, 10V
  • Current - Continuous Drain (Id) @ 25°C:137A (Tc)
  • Drain to Source Voltage (Vdss):100V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete

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