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IPI06N03LA

Infineon Technologies
IPI06N03LA HongDa Electronics IPI06N03LA
  • Manufacturer Part# IPI06N03LA
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 25V 50A I2PAK
  • More DetailN-Channel 25V 50A (Tc) 83W (Tc) Through Hole PG-TO...
In Stock: 1000

Can ship immediately

Datasheet:
IPI06N03LA Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:2V @ 40µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Power Dissipation (Max):83W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2653pF @ 15V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:22nC @ 5V

 

  • Series:OptiMOS™
  • Rds On (Max) @ Id, Vgs:6.2 mOhm @ 30A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Current - Continuous Drain (Id) @ 25°C:50A (Tc)
  • Drain to Source Voltage (Vdss):25V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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