IPI200N25N3GAKSA1

Technical Details

• Vgs(th) (Max) @ Id:4V @ 270µA
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package:PG-TO262-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):300W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:7100pF @ 100V
• Vgs (Max):±20V
• Gate Charge (Qg) (Max) @ Vgs:86nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:20 mOhm @ 64A, 10V
• Drive Voltage (Max Rds On, Min Rds On):10V
• Current - Continuous Drain (Id) @ 25°C:64A (Tc)
• Drain to Source Voltage (Vdss):250V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Active
• Packaging:Tube