IPI25N06S3L-22

Technical Details

• Vgs(th) (Max) @ Id:2.2V @ 20µA
• Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
• Supplier Device Package:PG-TO262-3
• Mounting Type:Through Hole
• Operating Temperature:-55°C ~ 175°C (TJ)
• Power Dissipation (Max):50W (Tc)
• FET Feature:--
• Input Capacitance (Ciss) (Max) @ Vds:2260pF @ 25V
• Vgs (Max):±16V
• Gate Charge (Qg) (Max) @ Vgs:47nC @ 10V

• Series:OptiMOS™
• Rds On (Max) @ Id, Vgs:21.6 mOhm @ 17A, 10V
• Drive Voltage (Max Rds On, Min Rds On):5V, 10V
• Current - Continuous Drain (Id) @ 25°C:25A (Tc)
• Drain to Source Voltage (Vdss):55V
• Technology:MOSFET (Metal Oxide)
• FET Type:N-Channel
• Part Status:Obsolete
• Packaging:Tube