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IPI65R099C6XKSA1

Infineon Technologies
IPI65R099C6XKSA1 HongDa Electronics IPI65R099C6XKSA1
  • Manufacturer Part# IPI65R099C6XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 38A TO-262
  • More DetailN-Channel 650V 38A (Tc) 278W (Tc) Through Hole PG-...
In Stock: 1000

Can ship immediately

Datasheet:
IPI65R099C6XKSA1 Datasheet

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 1.2mA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3-1
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):278W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:2780pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:127nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:99 mOhm @ 12.8A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:38A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Obsolete
  • Packaging:Tube 

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