• Manufacturer Part# IPI65R190C6XKSA1
  • Product CategoryDiscrete Semiconductor Products
  • Short DescriptionMOSFET N-CH 650V 20.2A TO262
  • More DetailN-Channel 650V 20.2A (Tc) 151W (Tc) Through Hole P...
In Stock: 1000

Can ship immediately

Technical Details

  • Vgs(th) (Max) @ Id:3.5V @ 730µA
  • Package / Case:TO-262-3 Long Leads, I²Pak, TO-262AA
  • Supplier Device Package:PG-TO262-3
  • Mounting Type:Through Hole
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Power Dissipation (Max):151W (Tc)
  • FET Feature:--
  • Input Capacitance (Ciss) (Max) @ Vds:1620pF @ 100V
  • Vgs (Max):±20V
  • Gate Charge (Qg) (Max) @ Vgs:73nC @ 10V

 

  • Series:CoolMOS™
  • Rds On (Max) @ Id, Vgs:190 mOhm @ 7.3A, 10V
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
  • Drain to Source Voltage (Vdss):650V
  • Technology:MOSFET (Metal Oxide)
  • FET Type:N-Channel
  • Part Status:Not For New Designs
  • Packaging:Tube 

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